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7MBR100SB060
IGBT MODULE (S series) 600V / 100A / PIM
IGBT Modules
Features
* Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rat ing 600 20 100 200 100 400 600 20 50 100 200 600 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC Collector power dissipation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power dissipation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I 2t (Non-Repetitive) I2 t Operating junction temperature Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Brake Converter Unit V V A A A W V V A A W V V A A A 2s C C V V N*m
Continuous 1ms 1 device
Continuous 1ms 1 device
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=100mA VGE=15V, Ic=100A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=100A VGE=15V RG=24 IF=100A chip terminal Min.
7MBR100SB060
Characteristics Typ. Max. 1.0 0.2 5.5 7.8 8.5 1.8 2.15 2.6 10000 0.45 0.25 0.08 0.40 0.05 1.6 1.95 1.2 0.6 1.0 0.35 V 2.7 0.3 1.0 0.2 2.5 1.2 0.6 1.0 0.35 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value
IF=100A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V IF=100A chip terminal VR=800V T=25C T=100C T=25/50C
1.8 2.05 0.45 0.25 0.40 0.05 1.1 1.2 5000 495 3375
Converter
mA V mA K
Thermistor
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.31 0.70 0.63 0.47 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [B ra k e ] 2 2 (P 1 )
8 9
[In v er ter ]
[Thermistor]
2 0 (G u)
1 8 (G v)
1 6 (G w )
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
7MBR100SB060
[ Inverter ] Collector current vs. Collector-Emitter voltage
250
[ Inverter ] Collector current vs. Collector-Emitter voltage
250
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 200
15V
12V VGE= 20V 200
15V
12V
Collector current : Ic [ A ]
150
Collector current : Ic [ A ]
150
100
100
10V 50 10V 50
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
250 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 200
o
Tj= 125 C Collector - Emitter voltage : VCE [ V ]
o
8
Collector current : Ic [ A ]
150
6
100
4
Ic=200A 2 Ic=100A Ic= 50A
50
0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
50000
o
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25
500
o
C
C
25
400 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
10000
Cies
300
15
5000
200
10
100
5
1000 Coes Cres 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 300 400 500 Gate charge : Qg [ nC ] 0 600
IGBT Modules
7MBR100SB060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj=125C
ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] tr
ton toff tr
100
100
tf
tf
10 0 50 100 Collector current : Ic [ A ] 150 200
10 0 50 100 Collector current : Ic [ A ] 150 200
[ Inverter ] Switching time vs. Gate resistance (typ.)
5000
[ Inverter ] Switching loss vs. Collector current (typ.)
10
Vcc=300V, Ic=100A, VGE=15V, Tj=25C
Vcc=300V, VGE=15V, Rg=24
ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff tr 8
Eon(125 C) Switching time : ton, tr, toff, tf [ nsec ] 1000 Eoff(125 C)
o
o
6
Eon(25 C)
o
4
Eoff(25 C)
o
100
tf
2 Err(125 C)
o o
Err(25 C) 10 10 Gate resistance : Rg [ 100
]
0 300 0 50 100 Collector current : Ic [ A ] 150 200
[ Inverter ] Switching loss vs. Gate resistance (typ.)
[ Inverter ] Reverse bias safe operating area
250
Vcc=300V, Ic=100A, VGE=15V, Tj=125C
20
+VGE=15V, -VGE<15V, Rg>24, Tj<125C = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 15 Collector current : Ic [ A ] 300
150
10 Eoff
100
5 50
Err 0 10 Gate resistance : Rg [ 100
]
0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR100SB060
[ Inverter ] Forward current vs. Forward on voltage (typ.)
250 300
[ Inverter ] Reverse recovery characteristics (typ.)
Vcc=300V, VGE=15V, Rg=24
200
Tj=125 C Tj=25 C Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ]
o
o
trr(125 C)
o
Forward current : IF [ A ]
100
o
150
Irr(125 C) trr(25 C) Irr(25 C)
o o
100
50
0 0 1 2 3 Forward on voltage : VF [ V ]
10 0 50 100 Forward current : IF [ A ] 150 200
[ Converter ] Forward current vs. Forward on voltage (typ.)
250
Tj= 25 C 200
o
Tj= 125 C
o
Forward current : IF [ A ]
150
100
50
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
5 200 100
[ Thermistor ] Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
1
FWD[Inverter]
o
Resistance : R [ k ] 1
IGBT[Brake] Conv. Diode IGBT[Inverter]
10
0.1
1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
0
20
40
60
80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
IGBT Modules
7MBR100SB060
[ Brake ] Collector current vs. Collector-Emitter voltage
120
[ Brake ] Collector current vs. Collector-Emitter voltage
120
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 100
15V
12V 100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
60
Collector current : Ic [ A ]
80
80
60
40
40 10V
20
10V
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
100
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
80
6
60
4
40
Ic=100A 2 Ic= 50A Ic= 25A
20
0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
20000
o
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25
500
o
C
C
25
10000 400 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ]
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 50 100 150 200 250 Gate charge : Qg [ nC ]
0 300
IGBT Modules
Outline Drawings, mm
7MBR100SB060
M712
8-R2.250.3 4-o5.50.3 13.09 15.24
21 20
1221 1100.3 19.05
19 18
94.50.3 19.05
17 16
15.24
15 14
3.81
4=15.24
10
11.5
+0.5 0
19.697
3.81 99.60.3
9
621 500.3 11.43 11.43
22
11.5 39.90.3 3.81 15.475 15.24
23
+0.5 0
7
11.665
3.81
24
1
2
3
4
5
6
4.198
4.055
14.995
15.24
15.24
15.24
15.24
15.24
A A 22.86
1.50.3
o0.4
o2.50.1
0.80.2
o2.10.1
3.50.5 1.10.3
Section A-A
10.2
2.90.3 6.50.5
20.51 171
Shows theory dimensions
60.3
1.150.2
57.50.3
3.81
8

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